Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement

ABSTRACT

A method and system for improving planarization and uniformity of dielectric layers for providing improved optical efficiency in CCD and CMOS image sensor devices. In various embodiments, a dielectric planarization method for achieving better optical efficiency includes first depositing a first dielectric having an optically transparent property on and around a metal pattern. Optical sensors are formed in or on the substrate in areas between metal features. The metal pattern protects a sensor situated therebetween and thereunder from electromagnetic radiation. After the first dielectric layer is polished using CMP, a slanted or inclined surface is produced but this non-uniformity is eliminated using further planarization processes that produce a uniform total dielectric thickness for the proper functioning of the sensor.

RELATED APPLICATION

This application is related to and claims priority of provisional U.S.Patent Application Ser. No. 60/562,086, filed Apr. 13, 2004 entitled“METHOD FOR PLANARIZATION OF DIELECTRIC LAYER BETWEEN TWO METALPATTERNS.”

BACKGROUND

The present invention relates generally to semiconductor processing, andmore particularly to structures and methods for planarization ofdielectric layers around metal patterns for optical efficiencyenhancement.

The development and deployment of optical devices such as CMOS imagesensor and charge-coupled devices (CCD) have been growing rapidly inrecent years. These devices have many special requirement compared togeneral logic device. For example, one of the requirements is thereduction of thickness of optical transparent dielectric in a backendpassivation layer such as silicon oxide, silicon nitride or siliconoxynitride. Another requirement is the uniform thickness of theoptically transparent dielectric material in the regions between metalpatterns, as well as the uniform thickness of the dielectric materialover the patterned metal. The metal pattern is used to blockelectromagnetic radiation, especially light, in the optical wavelengthrange. The incident light will pass through locations between metalpatterns to an optical sensing unit formed in or on the substrate. Thenon-uniform thickness of optical transparent dielectric in the areasbetween metal patterns will change the refractive index which results indiscolor phenomenon.

Due to the loading effect of chemical mechanical polishing (CMP), thedielectric between adjacent metal patterns may not be planar; rather,the dielectric may include a slanted or inclined surface. The slanted orincline surface of dielectric is indicative of thickness non-uniformity,which not only causes visual discolor but also degrades a sensor'sperformance.

Therefore, desirable in the art of semiconductor processing are methodsto improve planarization of dielectric layers for better opticalefficiency.

SUMMARY

In view of the foregoing, the following provides methods for improvingplanarization of dielectric layers for better optical efficiency.

In various embodiments, various dielectric planarization methods forachieving better optical efficiency are provided. For example, a firstdielectric layer having at least an optically transparent property isdeposited on and around a metal pattern comprising one or more depositedmetals. The metal of the metal pattern protects sensors situatedtherebetween and thereunder, from electromagnetic radiation. After thefirst dielectric layer is polished using chemical mechanical polishing(CMP), the resulting surface may be slanted or inclined, i.e.non-planar, and not parallel to the substrate. The slanted surface isremoved from the first dielectric layer and a uniform and planarizeddielectric surface for the proper functioning of the sensor, is formed.

According to one embodiment, a mask with the reverse of the metalpattern is utilized to planarize the dielectric. Photo processes andoxide etching processes are used to etch the dielectric and are followedby a CMP process to yield a planarized dielectric layer.

The construction and method of operation of the invention, however,together with additional objects and advantages thereof will be bestunderstood from the following description of specific embodiments whenread in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B illustrate a conventional flow for treating dielectriclayers on and between metal patterns.

FIGS. 2A through 2D illustrate a flow for treating dielectric layers inaccordance with the first exemplary embodiment of the present invention.

FIGS. 3A through 3C illustrate a flow for treating dielectric layers inaccordance with the second exemplary embodiment of the presentinvention.

FIGS. 4A through 4C illustrate a flow for treating dielectric layers inaccordance with the third exemplary embodiment of the present invention.

FIGS. 5A through 5C illustrate a flow for treating dielectric layers inaccordance with the fourth exemplary embodiment of the presentinvention.

DESCRIPTION

The following detailed description provides methods for planarization ofdielectric layers on and around metal patterns for enhancing opticalefficiency.

FIGS. 1A and 1B illustrate a conventional flow for treating dielectriclayers on and between metal patterns. The conventional flow includes twosteps shown in the two figures. Metals 106 and 108 within both the stepsare implemented to block electromagnetic radiation, especially light, inthe optical wavelength range. The metals 106 and 108 may be formed fromthe same metal film or from different metal. Metals 106 and 108 mayinclude different dimensions, and depending on the underlying topographyand whether metals 106 and 108 are formed from the same or a differentfilm, it is understood that the heights of metals 106 and 108 may beslightly different. The two steps shown in FIGS. 1A and 1B illustratehow this difference in height can create problems for sensor'sperformance.

Referring to FIG. 1A, a first dielectric layer 110 is deposited on andbetween the metals 106 and 108. First dielectric layer 110 is opticallytransparent. The height of the surface of the first dielectric layer 110will vary throughout the entire surface due to its conformality and thegap between the metals 106 and 108 and the height will also vary due tothe dimensional differences (vertical and horizontal) of the metals 106and 108. The first dielectric layer 110 then undergoes chemicalmechanical polishing (CMP) in the step as shown in FIG. 1B. Due to theloading effect of CMP and the non-uniformity height of the firstdielectric layer 110, the polishing process will result in thedielectric material between and over the metals 106 and 108 having aslanted or inclined surface which is not uniformly parallel to thesubstrate over which it is formed and may be non-planar. The slanted orinclined surface of dielectric is indicative of thicknessnon-uniformity, which not only causes visual discoloration but alsodegrades sensors performance since it results in a different distancebetween features such as lenses formed over the dielectric, and thesensing units formed in or on the substrate and below the dielectric.

FIGS. 2A through 2D illustrate a flow for treating dielectric layers inaccordance with the first embodiment of the present invention. This flowshows a method for uniform planarization of a dielectric surface, and isbroken down into four steps for illustrative purposes, in one exemplaryembodiment.

Referring to FIG. 2A, metals 210 and 212 are implemented to blockelectromagnetic radiation, especially light, in the optical wavelengthrange. The metals 210 and 212, are metal features and, collectively, areconsidered a metal pattern. The pattern may be formed by plasma etching,in one embodiment. The metals 210 and 212 can be lines, islands, or padsthat are made of metal such as copper, aluminum, various metalcompounds, or metal alloys. The metals 210 and 212 may be formed fromthe same metal film or from different metal films. Metals 210 and 212may be different in dimension size, and depending on the underlyingtopography and whether metals 210 and 212 are formed from the same or adifferent film, the heights of metals 212 and 210 may be different.Sensing units 202 may be formed in or on the substrate 220 in region 222that lies between the metals 210 and 212. The sensing units 202 may beused to form optical sensors such as a CCD, or a 3-transistor or4-transistor pinned photodiode CMOS image sensor. For example, a4-transistor pinned photodiode pixel sensor may be formed onsemiconductor substrate 220.

A first dielectric layer 214 is deposited after the formation of themetals 210 and 212 through plasma deposition or chemical vapordeposition. The first dielectric layer 214 could be formed by plasmaenhanced chemical vapor deposition (PECVD) or high density plasmachemical vapor deposition (HDPCVD) or a combination thereof. The firstdielectric layer 214 may be a silicon oxide or another suitabledielectric material and is generally a substantially optical transparentmaterial. The first dielectric layer 214 may be one or more films andmay include a total thickness ranging from 10000 Å to 25000 Å and in oneembodiment may be two films with a combined thickness of about 18000 Å.The height of the surface of the first dielectric layer 214 will varythroughout due to the conformality of the film(s), and the gap betweenthe metals 210 and 211 and also due to the dimensional differences ofthe metals 210 and 212. A CMP process is then performed on the firstdielectric layer 214 as shown in FIG. 2B. Due to the loading effect ofCMP and the non-uniform height of the first dielectric layer 214, thepolished dielectric material between the metals 210 and 212 will suffera slanted or inclined surface which is not uniformly parallel to thesubstrate 220 over which it is formed and may be non-planar and uneven.The slanted or inclined surface of dielectric is indicative of thicknessnon-uniformity, which, in image sensor devices, not only causes visualdiscoloration but also degrades sensors and adversely affects opticalperformance. The thickness of dielectric layer 214 that remains over thefirst metal 210 and/or second metal 212 may vary and may be about 4000 Åin one exemplary embodiment.

Referring to FIG. 2C, the first dielectric layer 214 is etched all theway down to the metals 210 and 212 using a selective etch process. Dueto this etching process, the upper surface of the remaining firstdielectric layer 214 is lower than the upper surfaces of the metals 210and 212. The thickness of the remaining dielectric between the metalfeatures may be about 50% or more of the thickness of one or both of themetals 210 and 212. The slanted surface of the first dielectric layer214 is eliminated by the end of this step. Referring to FIG. 2D, asecond dielectric layer 216, which is substantially an opticaltransparent material made by CVD or Spin-On method, is next deposited asa passivation layer above the first dielectric layer 214 and the metals210 and 212. Various thicknesses may be used. Throughout the substrate220, the total thickness of the dielectric materials over the metalareas is substantially the same and the total thickness of thedielectric material in areas between the metal areas i.e., over theoptical sensors 202, is substantially the same. A layer 224 of colorfilters, microlenses or associated features are then formed over theoptical sensors 202 formed in the substrate 220 to form CMOS imagesensors and CCD devices. With improved uniformity of the dielectriclayers, any visual discoloration is improved or eliminated, therebyallowing sensors and other devices to function properly.

FIGS. 3A through 3C illustrate a flow for treating dielectric layers inaccordance with the second embodiment of the present invention. The flowshows another method used for uniform planarization of dielectricsurface where both a first dielectric layer and metals are treated withCMP before depositing a second dielectric layer.

Referring to FIG. 3A, metals 308 and 310 are implemented to blockelectromagnetic radiation, especially light, in the optical wavelengthrange. The metals 308 and 310 are metal features and may be formed fromthe same metal film or from different metal films. Metals 308 and 310may be different in dimension size, and depending on the underlyingtopography and whether metals 308 and 310 are formed from the same or adifferent film, the heights of metals 310 and 308 may be different. Afirst dielectric layer 312 is deposited after the metals 308 and 310 areformed by plasma etching. First dielectric layer 312 is as described inconjunction with first dielectric layer 214 and may by be multiplelayers. Referring to FIG. 3B, CMP is then performed on the firstdielectric layer 312 resulting in the uneven, slanted surface (notshown) also described in conjunction with FIG. 2B and shown in FIG. 1B.A further CMP operation is also performed on the metals 308 and 310,using a process in which the polishing rate of metal is greater thanthat of the first dielectric layer 312. This results in the uppersurface of the remaining first dielectric layer 312 in the space betweenthe metals 308 and 310 being higher than that of either of the metals308 and 310. The slanted or inclined surface that was produced in thefirst dielectric layer 312 by the initial CMP, is eliminated by the endof this step.

Referring to FIG. 3C, a second dielectric layer 314, which issubstantially an optically transparent material formed by CVD or Spin-Onmethod, is deposited as a passivation layer. Various thicknesses may beused. Throughout the substrate, the thickness of the dielectric materialover the metal areas is substantially the same and the total thicknessof the dielectric material in areas between the metal areas i.e., overthe optical sensors, is substantially the same. The second dielectriclayer 314 may be one or more films and may include a total thicknessranging from 1000 Å to 10000 Å and may be 4000 Å in one embodiment. Alayer 316 of color filters, microlenses or associated features are thenformed over the optical sensors formed in the substrate to form CMOSimage sensors and CCD devices. With improved planarization anduniformity of the dielectric layers, any visual discoloration isimproved or eliminated, thereby allowing sensors and other devices tofunction properly.

FIGS. 4A through 4C illustrate a flow for treating dielectric layers inaccordance with a third embodiment of the present invention. The flowprovides yet another method for uniform planarization of the dielectricsurface in the illustrated embodiment.

Referring to FIG. 4A, metals 408 and 410 are implemented to blockelectromagnetic radiation, especially light, in the optical wavelengthrange. The metals 408 and 410, are metal features and collectively forma metal pattern, and they may be lines, islands, or pads that are madeof metal such as copper, aluminum, various metal compounds, or metalalloys. The metals 408 and 410 may be formed from the same metal film orfrom different metal films. Metals 408 and 410 may include differentdimensions, and depending on the underlying topography and whethermetals 408 and 410 are formed from the same or a different film, theheights of metals 410 and 408 may differ to a degree. A first dielectric412, like first dielectric layer 214 in FIG. 2A, is deposited after themetals 408 and 410 are formed. Referring to FIG. 4B, a CMP operationthat polishes the dielectric layer 412 at a rate faster than it polishesmetals, is then performed on the first dielectric layer 412 and recessesthe first dielectric 412 below the metals 408 and 410. As a result, theupper surface of the remaining first dielectric layer 412 issubstantially lower than the upper surfaces of the metals 408 and 410.The slant surface of the first dielectric layer 412 is improved oreliminated by the end of this step. Referring to FIG. 4C, a seconddielectric layer 414, which is substantially an optically transparentmaterial made by CVD or Spin-On method, is next deposited as apassivation layer above the first dielectric layer 412 and the metals408 and 410. Various thicknesses may be used. Throughout the substrate,the thickness of the dielectric material over the metal areas issubstantially the same and the total thickness of the dielectricmaterial in areas between the metal areas i.e., over the opticalsensors, is substantially the same. A layer 416 of color filters,microlenses and associated features are then formed over the opticalsensors formed in the substrate to form CMOS image sensors and CCDdevices. With improved planarization and uniformity of the dielectriclayers, any visual discoloration is improved or eliminated, therebyallowing sensors and other devices to function properly.

While the first, the second, and the third embodiments are illustratedwith only two dielectric layers, it is understood that this invention isnot limited to two layers. For example, an alternative method andembodiment is to form a third dielectric layer, a substantially opticaltransparent layer, by a spin-on method or a CVD method to reduce thedevice color filter ultra violet light (CF/UL) stack while improvingoptical sensitivity and reducing refraction.

It is further noted that the second dielectric layers deposited in thedescribed embodiments all serve as a passivation layer and may include athickness of 50 nm to 2000 nm to protect the underlying optical sensorfrom moisture and contamination. For example, if the second dielectriclayer is a stack of silicon oxide and silicon nitride, the thickness ofsilicon oxide is advantageously from 200 nm to 600 nm while thethickness of silicon nitride is advantageously from 100 nm to 300 nm. Ifthe second dielectric layer is a single silicon nitride layer, thethickness may range from 50 nm to 600 nm. If the second dielectric layeris single silicon oxide layer, the thickness is advantageously from 50nm to 600 nm.

FIGS. 5A through 5C illustrate a flow for treating dielectric layers inaccordance with the fourth embodiment of the present invention. The flowpresents yet another method for uniform planarization of the dielectricsurface by using an additional mask.

Referring to FIG. 5A, metals 508 and 510 are present to blockelectromagnetic radiation, especially light, in the optical wavelengthrange. The metals 508 and 510 are metal features and collectively form ametal pattern, and may be lines, islands, or pads that are made of metalsuch as copper, aluminum, various metal compounds, or metal alloy. Themetal pattern may be formed by plasma etching in one embodiment. Themetals 508 and 510 may be formed from the same metal film or fromdifferent metal films. Metals 508 and 510 may include differentdimensions, and depending on the underlying topography and whethermetals 508 and 510 are formed from the same or a different film, theheights of metals 510 and 508 may be different. Sensing units 502 may beformed in or on the substrate 520 in regions 522 between metals 508 and510. A first dielectric layer 512 which may be one or more dielectricfilms as described previously, is also deposited after the formation ofthe metals 508 and 510. Referring to FIG. 5B, a photomask 516 is nextused along with a photolithography process and an oxide etching processto produce recess 514 over one or more metals such as metal 510 and makethe first dielectric layer 512 more uniform. In one exemplaryembodiment, the photomask 516 may include the reverse tone of the metalpattern and produce a photo pattern that includes void areas over themetal with photoresist in other areas. Referring to FIG. 5C, after thephotomask is removed, CMP is then performed on the first dielectriclayer 512 to complete the process. After CMP, the total thickness of thedielectric material over the metal areas is substantially the same andthe total thickness of the dielectric material in areas between themetal areas i.e., over the optical sensors, is substantially the same.Improved planarization and uniformity of the dielectric layer isachieved and the slanted or inclined surface avoided.

The various exemplary embodiments may include the following. The metals508 and 510 may be covered by 8 K to 14 K of one or more an oxide filmsdeposited over the metals 508 and 510 as the first dielectric layer 512.In one exemplary embodiment, around 8 K of the oxide film from the firstdielectric layer 512 is removed from over the top of the metal 510 toeven the heights of the first dielectric layer 512 above the metals 508and 510. This leaves around 6 K of oxide film above the metal 510 asshown in FIG. 5B. CMP is then performed on the entire first dielectriclayer 512 for a thickness of 2 K as shown in FIG. 5C. Improvedplanarization of dielectric is achieved, since the produced surface willnot be slanted or declined.

This invention provides various methods for eliminating thicknessnon-uniformity in the dielectric layers. By etching back the firstdielectric layer or treating it with CMP until the uneven or slanted ofthe first dielectric layer is eliminated, the second dielectric layermay be deposited on the first dielectric layer and the metals to achieveimproved planarization of surface. With such methods, the produceddielectric surface will be uniform and not slanted or inclined, therebyallowing the devices or sensors to function properly and without visualdiscoloration. The device CF/UL stack can also be reduced with thesemethods, thereby improving optical sensitivity as well as reducingrefraction.

The above illustration provides many different embodiments orembodiments for implementing different features of the invention.Specific embodiments of components and processes are described to helpclarify the invention. These are, of course, merely embodiments and arenot intended to limit the invention from that described in the claims.

Although the invention is illustrated and described herein as embodiedin one or more specific examples, it is nevertheless not intended to belimited to the details shown, since various modifications and structuralchanges may be made therein without departing from the spirit of theinvention and within the scope and range of equivalents of the claims.Accordingly, it is appropriate that the appended claims be construedbroadly and in a manner consistent with the scope of the invention, asset forth in the following claims.

1. A method for forming a semiconductor device comprising: providing ametal pattern including metal features, over a substrate; depositing atleast one first dielectric layer of optical transparency over the metalfeatures and the substrate between the metal features; polishing the atleast one first dielectric layer; and forming a second dielectric layerover the metal features and the first dielectric layer therebetween,such that there is substantially the same first total dielectricthickness over the metal features and substantially the same secondtotal dielectric thickness over the substrate in areas between the metalfeatures.
 2. The method as in claim 1, further comprising providingoptical sensors in or on the substrate in the areas between the metalfeatures and forming a color filter and at least one microlens over atleast one of the optical sensors.
 3. The method as in claim 1, whereinthe polishing the at least one first dielectric layer comprises using achemical mechanical polishing operation that polishes the at least onefirst dielectric layer at a faster rate than the metal features to forma top surface of the at least one first dielectric layer below topsurfaces of the metal features.
 4. The method as in claim 1, furthercomprising, after the polishing, selectively etching the at least onefirst dielectric layer to make a top surface of the at least one firstdielectric layer below top surfaces of the metal features.
 5. The methodas in claim 4, wherein the polishing does not expose the top surfaces ofthe metal features.
 6. The method as in claim 4, wherein the polishingproduces different dielectric thicknesses over the metal features andthe substrate in areas between the metal features.
 7. The method as inclaim 5, wherein about 1000-10000 angstroms of the at least one firstdielectric remains over the top surfaces of the metal features after thepolishing.
 8. The method as in claim 1, comprising further polishing themetal features at a polish rate faster than that of the at least onefirst dielectric layer to form top surfaces of the metal features belowa top surface of the at least one first dielectric layer.
 9. The methodas in claim 1, further comprising, after the depositing and prior to thepolishing, etching portions of the at least one first dielectric layerdisposed over the metal features.
 10. The method as in claim 9, whereinthe etching comprises forming a photoresist pattern over the at leastone first dielectric layer, the photoresist pattern including a voidarea aligned over the metal feature.
 11. The method as in claim 10,wherein a reverse tone mask of the metal pattern is used in forming thephotoresist pattern.
 12. The method as in claim 1, wherein the metalfeatures include upper surfaces of different heights.
 13. The method asin claim 1, wherein the polishing produces different dielectricthicknesses over the metal features and the substrate in areastherebetween.
 14. The method as in claim 1, wherein the metal featuresare formed by separate metal layers.
 15. The method as in claim 1,wherein the at least one first dielectric layer is deposited by usingplasma enhanced chemical vapor deposition (PECVD) or high density plasmachemical vapor deposition (HDPCVD).
 16. The method as in claim 1,wherein the at least one first dielectric layer includes a thickness ofabout 10000-25000 angstroms, the polishing leaves about 1000-10000angstroms of the at least one first dielectric layer over the metalfeatures, and the second dielectric comprises a thickness of about1000-10000 angstroms.
 17. A method for forming a semiconductor imagesensor comprising: providing a metal pattern with metal features over asubstrate and optical sensors in or on the substrate in areas betweenthe metal features; depositing at least one optically transparentdielectric layer over the metal features and the substrate in the areasbetween the metal features; etching portions of the at least onedielectric layer disposed over at least one of the metal features;polishing the at least one dielectric layer using chemical mechanicalpolishing; and forming at least one of a color filter and a microlensover at least one of the optical sensors.
 18. The method as in claim 17,wherein the polishing produces substantially the same thickness of theat least one dielectric layer over the metal features and substantiallythe same second thickness of the at least one dielectric layer over thesubstrate in the areas between the metal features.
 19. The method as inclaim 18, wherein the etching comprises forming a photoresist patternover the at least one dielectric, the photoresist pattern including voidareas aligned over at least some of the metal features, and photoresistareas in other regions, then plasma etching.
 20. A method for forming asemiconductor image sensor, comprising: providing a metal patternincluding metal features over a substrate; depositing at least oneoptically transparent first dielectric layer over the metal features andover the substrate between the metal features; polishing the at leastone first dielectric layer to expose top surfaces of the metal features;polishing the metal features using a chemical mechanical polishingprocess that polishes the metal features faster than the at least onefirst dielectric layer to form top surfaces of the metal features belowa top surface of the at least one dielectric; and forming a seconddielectric layer over the metal features and the first dielectric layertherebetween, such that there is substantially the same first totaldielectric thickness over the metal features and substantially the samesecond total dielectric thickness over the substrate in areas betweenthe metal features.
 21. A semiconductor structure for a complementarymetal-oxide-semiconductor (CMOS) image sensor, comprising: a first metalfeature disposed above a semiconductor substrate; a second metal featuredisposed adjacent to the first metal feature on a same level thereatabove the semiconductor substrate; a first dielectric layer depositedbetween the first and second metal features; and a second dielectriclayer covering the first metal feature, the second metal feature and thefirst dielectric layer, wherein the second dielectric layer issubstantially flat over the first dielectric layer.
 22. Thesemiconductor structure of claim 21 further comprising a sensing unitdisposed on the semiconductor substrate under the first dielectric layerbetween the first and second metal features.
 23. The semiconductorstructure of claim 21 wherein the first dielectric layer has a maximumthickness smaller than that of the first or second metal feature. 24.The semiconductor structure of claim 21 wherein the first dielectriclayer has a maximum thickness greater than that of the first or secondmetal feature.
 25. The semiconductor structure of claim 21 wherein thefirst dielectric layer is substantially optical transparent.
 26. Thesemiconductor structure of claim 21 wherein the second dielectric layeris substantially optical transparent.
 27. The semiconductor structure ofclaim 21 further comprising a layer of color filter formed overlying thesecond dielectric layer.
 28. The semiconductor structure of claim 21further comprising a layer of microlenses formed overlying the seconddielectric layer.